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PD - 91309A IRF3710 HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 23m G S ID = 57A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 57 40 230 200 1.3 20 28 20 5.8 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 0.75 --- 62 Units C/W www.irf.com 1 01/17/02 IRF3710 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 100 --- --- 2.0 32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 23 m VGS = 10V, ID =28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3130 --- VGS = 0V 410 --- VDS = 25V 72 --- pF = 1.0MHz, See Fig. 5 1060280 mJ IAS = 28A, L = 0.70mH Typ. --- 0.13 --- --- --- --- --- --- --- --- --- --- 12 58 45 47 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 57 --- --- showing the A G integral reverse --- --- 230 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 28A, VGS = 0V --- 140 220 ns TJ = 25C, IF = 28A --- 670 1010 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD 28A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 0.70mH Pulse width 400s; duty cycle 2%. RG = 25, IAS = 28A, VGS=10V (See Figure 12) This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . 2 www.irf.com IRF3710 1000 VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V TOP 10 10 3.5V 1 3.5V 1 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 0.1 0.1 1 20s PULSE WIDTH Tj = 175C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 3.0 I D = 57A ID, Drain-to-Source Current ( ) 2.5 100.00 R DS(on) , Drain-to-Source On Resistance T J = 175C 10.00 2.0 (Normalized) 1.5 T J = 25C 1.00 1.0 0.5 0.10 3.0 4.0 5.0 VDS = 15V 20s PULSE WIDTH 6.0 7.0 8.0 9.0 0.0 -60 -40 -20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF3710 100000 12 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd ID = 28A 10 V DS = 80V V DS = 50V V DS = 20V 10000 C, Capacitance(pF) Ciss 1000 VGS, Gate-to-Source Voltage (V) 7 Coss 5 100 Crss 2 10 1 10 100 0 0 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 T J = 175C 10.00 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 100sec 10 1msec 1.00 T J = 25C 1 Tc = 25C Tj = 175C Single Pulse 1 10 10msec VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 VSD , Source-toDrain Voltage (V) 0.1 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF3710 60 VDS 50 RD VGS RG D.U.T. + 40 -VDD I D , Drain Current (A) VGS 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC) D = 0.50 0.20 Thermal Response 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T J 0.01 0.00001 t1/ t 2 = P DM x Z thJC 0.1 +TC 0.0001 0.001 0.01 P DM t1 t2 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3710 550 1 5V VD S L D R IV E R 440 ID TOP 11A 20A 28A BOTTOM RG VGS 20V D .U .T IA S tp 0 .0 1 + - VD D E AS , Single Pulse Avalanche Energy (mJ) 330 A 220 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 110 0 25 50 75 100 125 150 175 Starting T , Junction Temperature J ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF3710 Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRF3710 Package Outline TO-220AB Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/02 8 www.irf.com |
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